Menu

What's New

FET100 100 years of the Field Effect Transistor (FET)

The concept of the Field Effect Transistor (FET) was first captured as a patent filed with the Canadian Patent Office by Julius Lilienfeld on October 22, 1925. Over the past century, the development and innovations of the FET have been crucial in enabling modern electronics. To commemorate this, EDS is organizing a series of activities under themed “the 100 Years of the FET” (FET100), including the inaugural FET100 Forum at EDTM 2025. 
 
Established and sponsored by IEEE EDS, EDTM is the premier event in Asia in the field of EDS. The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) will be held during March 9-12 in Hong Kong. EDTM 2025 provides a significant platform to enhance the visibility and impact of the FET100 celebrations. The FET100 Forum will be a plenary session, ensuring no other parallel sessions compete for attention, and will be seamlessly integrated with the main EDTM 2025 program to maximize its prominence.
National Yang Ming Chiao Tung University, Taiwan

Hiroshi Iwai

National Yang Ming Chiao Tung University, Taiwan
Electrical Engineering, Stanford University, USA

H.-S. Philip Wong

Electrical Engineering, Stanford University, USA
Department of Electrical Engineering and Computer Sciences, University of California, USA

Chenming Hu

Department of Electrical Engineering and Computer Sciences, University of California, USA
SkyLake Investment Company, South Korea

Dae-Je Chin

SkyLake Investment Company, South Korea

Plenary Speakers

Northwestern University, USA

John A. Rogers

Northwestern University, USA
Fudan University, China

Ming Liu

Fudan University, China
Stanford University, USA

Subhasish Mitra

Stanford University, USA
Zhejiang University, China

Hanming Wu

Zhejiang University, China