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FET100 100 years of the Field Effect Transistor (FET)

The concept of the Field Effect Transistor (FET) was first captured as a patent filed with the Canadian Patent Office by Julius Lilienfeld on October 22, 1925. Over the past century, the development and innovations of the FET have been crucial in enabling modern electronics. To commemorate this, EDS is organizing a series of activities under themed “the 100 Years of the FET” (FET100), including the inaugural FET100 Forum at EDTM 2025. 
 
Established and sponsored by IEEE EDS, EDTM is the premier event in Asia in the field of EDS. The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) will be held during March 9-12 in Hong Kong. EDTM 2025 provides a significant platform to enhance the visibility and impact of the FET100 celebrations. The FET100 Forum will be a plenary session, ensuring no other parallel sessions compete for attention, and will be seamlessly integrated with the main EDTM 2025 program to maximize its prominence.
National Yang Ming Chiao Tung University, Taiwan

Hiroshi Iwai

National Yang Ming Chiao Tung University, Taiwan
Electrical Engineering, Stanford University, USA

H.-S. Philip Wong

Electrical Engineering, Stanford University, USA
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, USA

Chenming Hu

Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, USA
SkyLake Investment Company, South Korea

Dae-Je Chin

SkyLake Investment Company, South Korea
School of Integrated Circuits, Peking University, China

Runsheng Wang

School of Integrated Circuits, Peking University, China

Plenary Speakers

Northwestern University, USA

John A. Rogers

Northwestern University, USA
Fudan University, China

Ming Liu

Fudan University, China
Stanford University, USA

Subhasish Mitra

Stanford University, USA
Zhejiang University, China

Hanming Wu

Zhejiang University, China

Contact Information

Conference Secretariat:

Veronica CHENG

The 9th IEEE Electron Devices Technology and Manufacturing (EDTM 2025) Conference will be held for the first time in Hong Kong, Asia’s World City and the epicenter of finance and trade. EDTM 2025 will be a full four-day conference, established and sponsored by the IEEE Electron Devices Society (EDS). It is a premier conference, which aims to bring together experts/researchers from industry and academia around the world on a common platform, to showcase new discoveries and discuss on a broad range of topics covering semiconductor device technology and manufacturing.

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Technical Areas

EDTM 2025 solicits papers in all areas of electronic devices, including materials, processes, modeling, device/circuit/system design, reliability, packaging, manufacturing, testing, and yield.

EDTM 2025 will include parallel technical sessions of oral and poster presentations. Submitted papers after review will be considered for Best Paper, Best Student Paper, and Best Poster Awards.

Publications

The accepted and presented papers will be published in the EDTM 2025 Proceedings included in IEEE Xplore. The authors of a selected number of high-impact papers will be invited to submit extended versions for publication in the special issue of IEEE Journal of Electron Devices Society (J-EDS), subjected to J-EDS policy.

Short Courses and Tutorials

EDTM 2025 will start with a set of short courses and tutorials on March 9, 2025. Tutorials will cover selected topics from the basics to the state-of-the-art. The Short Courses will discuss the latest research and challenges on emerging and advanced topics.

Exhibition

EDTM 2025 offers vendors to showcase their newest products and technologies, allowing attendees to learn about new tools and techniques.

Call for Papers Important Dates

August 15, 2024

Three-page camera-ready paper submission starts

October 15
October 31, 2024

Paper submission deadline

December 31, 2024

Notification for Acceptance